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Springer Handbook of Electronic and Photonic Materials
Wide-Bandgap II–VI Semiconductors: Growth and Properties
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Author(s):
Jifeng Wang
,
Minoru Isshiki
Publication date
(Print):
2006
Publisher:
Springer US
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Animal models of intrauterine growth restriction (IUGR)
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Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
K. C. Rajkumar
,
A Madhukar
,
S Guha
(1990)
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Electrical properties of bulk ZnO
G. Cantwell
,
D.C. Reynolds
,
J.R. Sizelove
…
(1998)
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Structure and growth of crystalline superlattices: From monolayer to superlattice
E. Bauer
,
Jan H. van der Merwe
(1986)
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Book Chapter
Publication date (Print):
2006
Pages
: 325-342
DOI:
10.1007/978-0-387-29185-7_16
SO-VID:
3113c3f3-3f53-454f-9e44-ddb1013db9d6
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Book chapters
pp. 325
Wide-Bandgap II–VI Semiconductors: Growth and Properties
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