Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)

Rajkumar, K. C.; Madhukar, A; Guha, S

doi:10.1063/1.103914

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Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)

Author(s): S. Guha , A. Madhukar , K. C. Rajkumar

Publication date Created: November 12 1990

Publication date (Print): November 12 1990

Journal: Applied Physics Letters

Publisher: AIP Publishing

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Most cited references 6

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Dislocation-free Stranski-Krastanow growth of Ge on Si(100).

D. J. Eaglesham, M Cerullo (1990)

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Initial stages of epitaxial growth of GaAs on (100) silicon

D. Biegelsen, F. Ponce, A. J. Smith … (1987)

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Nucleation of GaAs on Si: Experimental evidence for a three‐dimensional critical transition

A. Fischer-Colbrie, R Hull (1987)

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Author and article information

Journal

Title: Applied Physics Letters

Abbreviated Title: Appl. Phys. Lett.

Publisher: AIP Publishing

ISSN (Print): 0003-6951

ISSN (Electronic): 1077-3118

Publication date Created: November 12 1990

Publication date (Print): November 12 1990

Volume: 57

Issue: 20

Pages: 2110-2112

Article

DOI: 10.1063/1.103914

SO-VID: 2cc1ce6a-1ef2-43e4-9157-45c009d0e7b9

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