The mechanism of layer number and strain dependent bandgap of 2D crystal PtSe2

There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

Related collections

Most cited references 13

Record: found
Abstract: not found
Article: not found

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

J. D. Lee, Soon Cheol Hong, In Gee Kim … (2012)

0 comments Cited 331 times – based on 0 reviews      Review now

Bookmark

Record: found
Abstract: found
Article: found

Is Open Access

How does quantum confinement influence the electronic structure of transition metal sulfides TmS2

Agnieszka B. Kuc, Thomas Heine, Nourdine Zibouche (2011)

Bulk MoS2, a prototypical layered transition-metal dichalcogenide, is an indirect band gap semiconductor. Reducing its size to a monolayer, MoS2 undergoes a transition to the direct band semiconductor. We support this experimental observation by first principles calculations and show that quantum confinement in layered d-electron dichalcogenides results in tuning the electronic structure at the nanoscale. We further studied the properties of related TmS2 nanolayers (Tm = W, Nb, Re) and show that the isotopological WS2 exhibits similar electronic properties, while NbS2 and ReS2 remain metallic independent on size.

0 comments Cited 161 times – based on 0 reviews

Preprint

     Review now

Bookmark

Record: found
Abstract: not found
Article: not found

Band-gap transition induced by interlayer van der Waals interaction in MoS2

Steve Han, HyukSang Kwon, Seong Keun Kim … (2011)

0 comments Cited 105 times – based on 0 reviews      Review now

Bookmark

All references

Author and article information

Journal

Title: Journal of Applied Physics

Abbreviated Title: Journal of Applied Physics

Publisher: AIP Publishing

ISSN (Print): 0021-8979

ISSN (Electronic): 1089-7550

Publication date Created: November 28 2017

Publication date (Print): November 28 2017

Volume: 122

Issue: 20

Page: 205701

Affiliations

[1 ]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China

Article

DOI: 10.1063/1.5000419

SO-VID: f0b4a2d9-8088-45f4-add3-30fb287f72d2

History

Data availability:

Comments

Comment on this article

scite_

Smart Citations

Citing PublicationsSupportingMentioningContrasting

View Citations

See how this article has been cited at scite.ai

scite shows how a scientific paper has been cited by providing the context of the citation, a classification describing whether it supports, mentions, or contrasts the cited claim, and a label indicating in which section the citation was made.