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Die physikalische Wirkungsweise von Kristallverstärkern (Transistoren)

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Author(s): Eberhard Spenke

Publication date (Print): 1965

Publisher: Springer Berlin Heidelberg

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Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics

William Shockley, Chih-Tang Sah, Robert Noyce (1957)

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The Theory ofp-nJunctions in Semiconductors andp-nJunction Transistors

W. Shockley (1949)

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A Unipolar "Field-Effect" Transistor

W. Shockley (1952)

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Publication date (Print): 1965

Pages: 184-235

DOI: 10.1007/978-3-642-48244-1_5

SO-VID: 6913f40b-861e-4a77-acf4-47aa3b701f38

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Die physikalische Wirkungsweise von Kristallverstärkern (Transistoren)

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Most cited references 18

Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics

The Theory ofp-nJunctions in Semiconductors andp-nJunction Transistors

A Unipolar "Field-Effect" Transistor

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