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First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering

Author(s): A Vais, R. Alcotte, M. Ingels, P. Wambacq, B Parvais, R. Langer, B Kunert, N Waldron, N. Collaert, L. Witters, Y. Mols, A. HERNÁNDEZ, A Walke, H yu, M. Baryshnikova, G. Mannaert, V. DESHPANDE

Publication date: 2019

Journal: 2019 IEEE International Electron Devices Meeting (IEDM)

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DOI:: 10.1109/IEDM19573.2019.8993539

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