Radiative transitions induced in gallium arsenide by modest heat treatment

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Most cited references 16

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Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV

M. Sturge (1962)

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Optical absorption and recombination radiation in semiconductors due to transitions between hydrogen-like acceptor impurity levels and the conduction band

D.M. Eagles (1960)

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Evidence for Self-Activated Luminescence in GaAs: The Gallium Vacancy-Donor Center

E Williams (1968)

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Author and article information

Journal

Title: Journal of Applied Physics

Abbreviated Title: Journal of Applied Physics

Publisher: AIP Publishing

ISSN (Print): 0021-8979

ISSN (Electronic): 1089-7550

Publication date Created: January 1980

Publication date (Print): January 1980

Volume: 51

Issue: 1

Pages: 619-624

Article

DOI: 10.1063/1.327316

SO-VID: d096206c-0532-4377-9efd-7241623e4a4a

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