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      Flux method growth of bulk MoS 2single crystals and their application as a saturable absorber

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          Abstract

          A 3 mm × 5 mm crystal of MoS 2is grown by the Sn flux method.

          Abstract

          Molybdenum disulfide (MoS 2) has attracted a great deal of attention because of its outstanding physical, chemical and optoelectronic properties. The method used to prepare large sized MoS 2crystals of very high quality is still an important issue for determining the feasibility of its application. Herein, we propose a novel Sn flux method to grow single crystal MoS 2, and bulk MoS 2single crystals with a size of 3 mm × 5 mm were successfully obtained by using a cooling rate of 2–4 °C h −1. The growth mechanism of the MoS 2crystal in Sn flux was investigated in detail using optical microscopy and atomic force microscopy (AFM). The obvious screw dislocation steps that are revealed suggest that the growth of MoS 2is controlled by a screw-dislocation-driven (SDD) spiral growth mechanism. The flux-grown MoS 2crystals were exfoliated to produce high-quality large-scale films using the liquid-phase exfoliation method. Using ultrathin MoS 2films as a saturable absorber, a passively Q-switched laser at a wavelength of 1.06 μm was constructed and operated, with a narrow pulse width of 326 ns.

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          Most cited references36

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          Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

          The remarkable properties of graphene have renewed interest in inorganic, two-dimensional materials with unique electronic and optical attributes. Transition metal dichalcogenides (TMDCs) are layered materials with strong in-plane bonding and weak out-of-plane interactions enabling exfoliation into two-dimensional layers of single unit cell thickness. Although TMDCs have been studied for decades, recent advances in nanoscale materials characterization and device fabrication have opened up new opportunities for two-dimensional layers of thin TMDCs in nanoelectronics and optoelectronics. TMDCs such as MoS(2), MoSe(2), WS(2) and WSe(2) have sizable bandgaps that change from indirect to direct in single layers, allowing applications such as transistors, photodetectors and electroluminescent devices. We review the historical development of TMDCs, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
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            Single-layer MoS2 transistors.

            Two-dimensional materials are attractive for use in next-generation nanoelectronic devices because, compared to one-dimensional materials, it is relatively easy to fabricate complex structures from them. The most widely studied two-dimensional material is graphene, both because of its rich physics and its high mobility. However, pristine graphene does not have a bandgap, a property that is essential for many applications, including transistors. Engineering a graphene bandgap increases fabrication complexity and either reduces mobilities to the level of strained silicon films or requires high voltages. Although single layers of MoS(2) have a large intrinsic bandgap of 1.8 eV (ref. 16), previously reported mobilities in the 0.5-3 cm(2) V(-1) s(-1) range are too low for practical devices. Here, we use a halfnium oxide gate dielectric to demonstrate a room-temperature single-layer MoS(2) mobility of at least 200 cm(2) V(-1) s(-1), similar to that of graphene nanoribbons, and demonstrate transistors with room-temperature current on/off ratios of 1 × 10(8) and ultralow standby power dissipation. Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors. Monolayer MoS(2) could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
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              The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets.

              Ultrathin two-dimensional nanosheets of layered transition metal dichalcogenides (TMDs) are fundamentally and technologically intriguing. In contrast to the graphene sheet, they are chemically versatile. Mono- or few-layered TMDs - obtained either through exfoliation of bulk materials or bottom-up syntheses - are direct-gap semiconductors whose bandgap energy, as well as carrier type (n- or p-type), varies between compounds depending on their composition, structure and dimensionality. In this Review, we describe how the tunable electronic structure of TMDs makes them attractive for a variety of applications. They have been investigated as chemically active electrocatalysts for hydrogen evolution and hydrosulfurization, as well as electrically active materials in opto-electronics. Their morphologies and properties are also useful for energy storage applications such as electrodes for Li-ion batteries and supercapacitors.
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                Author and article information

                Journal
                CRECF4
                CrystEngComm
                CrystEngComm
                Royal Society of Chemistry (RSC)
                1466-8033
                2015
                2015
                : 17
                : 21
                : 4026-4032
                Affiliations
                [1 ]State Key Laboratory of Crystal Materials
                [2 ]Shandong University
                [3 ]Jinan, China
                [4 ]Key Laboratory of Functional Crystal Materials and Device (Shandong University, Ministry of Education)
                Article
                10.1039/C5CE00484E
                9fa0a087-83e6-4767-be6e-79875f2aa348
                © 2015
                History

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