A 3 mm × 5 mm crystal of MoS 2is grown by the Sn flux method.
Molybdenum disulfide (MoS 2) has attracted a great deal of attention because of its outstanding physical, chemical and optoelectronic properties. The method used to prepare large sized MoS 2crystals of very high quality is still an important issue for determining the feasibility of its application. Herein, we propose a novel Sn flux method to grow single crystal MoS 2, and bulk MoS 2single crystals with a size of 3 mm × 5 mm were successfully obtained by using a cooling rate of 2–4 °C h −1. The growth mechanism of the MoS 2crystal in Sn flux was investigated in detail using optical microscopy and atomic force microscopy (AFM). The obvious screw dislocation steps that are revealed suggest that the growth of MoS 2is controlled by a screw-dislocation-driven (SDD) spiral growth mechanism. The flux-grown MoS 2crystals were exfoliated to produce high-quality large-scale films using the liquid-phase exfoliation method. Using ultrathin MoS 2films as a saturable absorber, a passively Q-switched laser at a wavelength of 1.06 μm was constructed and operated, with a narrow pulse width of 326 ns.
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