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      Zn‐Doped P‐Type InAs Nanocrystal Quantum Dots

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          Abstract

          Doped heavy metal‐free III–V semiconductor nanocrystal quantum dots (QDs) are of great interest both from the fundamental aspects of doping in highly confined structures, and from the applicative side of utilizing such building blocks in the fabrication of p–n homojunction devices. InAs nanocrystals (NCs), that are of particular relevance for short‐wave IR detection and emission applications, manifest heavy n‐type character poising a challenge for their transition to p‐type behavior. The p‐type doping of InAs NCs is presented with Zn – enabling control over the charge carrier type in InAs QDs field effect transistors. The post‐synthesis doping reaction mechanism is studied for Zn precursors with varying reactivity. Successful p‐type doping is achieved by the more reactive precursor, diethylzinc. Substitutional doping by Zn 2+ replacing In 3+ is established by X‐ray absorption spectroscopy analysis. Furthermore, enhanced near infrared photoluminescence is observed due to surface passivation by Zn as indicated from elemental mapping utilizing high‐resolution electron microscopy corroborated by X‐ray photoelectron spectroscopy study. The demonstrated ability to control the carrier type, along with the improved emission characteristics, paves the way towards fabrication of optoelectronic devices active in the short‐wave infrared region utilizing heavy‐metal free nanocrystal building blocks.

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          Building devices from colloidal quantum dots

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            Colloidal Quantum Dot Solar Cells.

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              Semiconductor quantum dots: Technological progress and future challenges

              In quantum-confined semiconductor nanostructures, electrons exhibit distinctive behavior compared with that in bulk solids. This enables the design of materials with tunable chemical, physical, electrical, and optical properties. Zero-dimensional semiconductor quantum dots (QDs) offer strong light absorption and bright narrowband emission across the visible and infrared wavelengths and have been engineered to exhibit optical gain and lasing. These properties are of interest for imaging, solar energy harvesting, displays, and communications. Here, we offer an overview of advances in the synthesis and understanding of QD nanomaterials, with a focus on colloidal QDs, and discuss their prospects in technologies such as displays and lighting, lasers, sensing, electronics, solar energy conversion, photocatalysis, and quantum information.
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                Author and article information

                Contributors
                Journal
                Advanced Materials
                Advanced Materials
                Wiley
                0935-9648
                1521-4095
                February 2023
                December 16 2022
                February 2023
                : 35
                : 5
                Affiliations
                [1 ] The Institute of Chemistry and The Center for Nanoscience and Nanotechnology The Hebrew University of Jerusalem Jerusalem 91904 Israel
                [2 ] Department of Physics and Astronomy Manhattan College Riverdale New York 10471 USA
                [3 ] Department of Materials Science and Chemical Engineering Stony Brook University Stony Brook New York 11794 USA
                [4 ] Chemistry Division Brookhaven National Laboratory Upton New York 11973 USA
                [5 ] The Zisapel Nano‐Electronics Center Department of Electrical Engineering Technion – Israel Institute of Technology Haifa 32000 Israel
                Article
                10.1002/adma.202208332
                36398421
                01d05c43-8036-4f89-be36-3be18343893f
                © 2023

                http://creativecommons.org/licenses/by/4.0/

                http://creativecommons.org/licenses/by/4.0/

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